Optical Materials
Micro-Optical Components
Fiber Optic Components
Light Sources & Photodiodes
  Fiber Coupled Laser Diodes
  Receptacle Laser Diodes
  Light Source Modules
  InGaAs Photodiodes
(0.95~1.65um)

  InGaAs Photodiodes
(0.6~1.7um)

  InGaAs Photodiodes
(0.9~2.2um)

  InGaAs Photodiodes
(0.9~2.6um)

  InGaAs APD
  InGaAs Linear Image Sensor
  InGaAs Area Image Sensor
  Pigtailed InGaAs Photodiodes
  Pyroelectric Infrared Sensor
  NDIR Gas Sensor
  Infrared Thermopile Temperature Sensor
  Visible Light Sensor
  2um Pigtailed Photodiodes
  Pigtailed Si Photodiodes
  Receptacle Si Photodiodes
Spectrometers
Wafers
Services
       

Cooled Near-Infrared (0.9~1.7µm) 640X512 InGaAs Focal Plane Array

Product Description: 

Precision Micro-Optics offers three types of cooled Near-Infrared (0.9~1.7µm) 640X512 InGaAs Focal Plane Array. The first is with 1-stage high voltage thermoelectric cooler, the second is with 1-stage high current thermoelectric cooler, and the third is with 2-stage thermoelectric cooler

 

 

Product Features:

  • 640X512 Array Format
  • 28-pin Metal SDIP Package
  • Embedded Thermoelectric Cooler
  • Built-in Temperature Sensor
  • 0.9 μm – 1.7 μm Spectral Range
  • Typical Pixel Operability > 99.9%
  • Quantum Efficiency > 70%
  • Snapshot ITR / IWR and IMRO Readout Modes
  • 2, 4 or 8 Outputs with up to 18 MHz Pixel Rate
  • windowing Capability

Applications:

  • Near-Infrared Imaging
  • Covert Surveillance
  • Semiconductor Inspection / Process Monitoring

SPECIFICATIONS (ITS = 20 ± 1ºC)(Readings from Integrated Temperature Sensor (ITS)):

Parameters
Symbol
Test conditions
Min
Typ Max
Unit
Sensor Technology
    Planar InGaAs PIN

Actual Pixel Array
    640 x 512

Effective Pixel Array
    636 x 508

Pixel Pitch
    15
µm
Spectral Response Range
λ
  900
  1700
nm
Dark Current (*)

Photopixel Biased @ -0.5V
Mean Value (6250 e-/s)
 
20
fA
Quantum Efficiency * Fill Factor(*)
QEFF
λ = 1.0~1.6µm
70

%
Response Nonuniformity(*)

At 50 % Well Occupation

5
%
Response Nonlinearity(*)

15 % – 85 % Well Occupation Range

2
%
Charge Capacity
(ROIC Specifications)


@High Gain, 46.2µV/e-

0.041
  Me-
@Mid Gain, 16.2µV/e-

0.118
 
@Low Gain, 1.39µV/e-

1.380
 
Readout Noise Floor

In High Gain Mode


35 e-
Noise-Equivalent Irradiance
NEI
In High Gain Mode
Integration Time=3.33ms
λ = 1.55µm


1.8X1010 ph#/cm2-s
Mean Detectivity

3.5X1012

cm-√Hz/W
Output Swing


2.25

V
Minimum Integration Period

   
1
μs
Pixel Operability(*)

Percentage of Pixels with QEFF
Deviation ± 20%*(QEFF Mean)
99.9
  %
Image Size
    9.6 x 7.68
mm
Package Type
    28-pin Metal SDIP Package

Package Size L x W x T
  Without Pins  36.1 x 25.4 x 7.3
mm
Weight
  All Models  19.5±0.5
g
Maximum Cooling Capability
THeatsink=20°C


1-stage Cooler 40

°C
2-stage Cooler 60

Note (*): These items are defined for central effective pixel array (636x508). Their values correspond to default operation conditions.

 

Absolute Maximum Ratings (T=25ºC):

  Parameters
Min
Typ Max
Unit
  Operating Temperature
-40
  71
°C
  Storage Temperature
-40
  80
°C
  Power Consumption
    200
mW
  TEC Bias (1-stage High Voltage)
    12
V
  TEC Bias (1-stage High Current)
    6
V
  TEC Bias (2-stage)
    10
V
  TEC Current (1-stage High Voltage)
    1.4
A
  TEC Current (1-stage High Current)
    2.6
A
  TEC Current (2-stage)
    2.1
A

 

Package Dimensions (mm):

Note: height is 2.95mm for 1-stage and 4.05mm for 2-stage.

Curves :

Copyright © 2016 Precision Micro-Optics Inc. All Rights Reserved.